MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers
Identifieur interne : 000933 ( Main/Repository ); précédent : 000932; suivant : 000934MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers
Auteurs : RBID : Pascal:13-0201179Descripteurs français
- Pascal (Inist)
- Méthode MOVPE, Epitaxie phase vapeur, Mécanisme croissance, Propriété optique, Propriété électronique, Propriété électrique, Addition magnésium, Couche épaisse, Caractéristique capacité tension, Mesure tension électrique, Photoluminescence, Recuit, Conductivité type p, Dopage, Nitrure de gallium, Nitrure d'indium, Conductivité électrique, Diode électroluminescente, Compensation, Méthode MOCVD, Semiconducteur III-V, Composé ternaire, InGaN, Substrat GaN, 8115K, 8110A, 7820, 7855.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Annealing, CV characteristic, Compensation, Doping, Electrical conductivity, Electrical properties, Electronic properties, Gallium nitride, Growth mechanism, III-V semiconductors, Indium nitride, Light emitting diodes, MOCVD, MOVPE method, Magnesium additions, Optical properties, P type conductivity, Photoluminescence, Ternary compounds, Thick films, VPE, Voltage measurement.
Abstract
A series of Mg-doped thick InGaN layers with different Cp2Mg flows were grown on n-type GaN layers. The Mg doping effect on optical and electrical properties of InGaN:Mg was investigated through capacitance-voltage (C-V) measurements and temperature-resolved photoluminescence (PL). After annealing, p-type conductivity with acceptor concentrations about 3.5 × 1018 cm-3 and 9.5 × 1017 cm-3 were observed for the samples doped with little Cp2Mg. With the highest Cp2Mg flow, an inversion from p-type to n-type was observed by analysis of a Mott-Schottky (M-S) plot. The inversion of conductivity type was accompanied by a disappearance of InGaN band-to-band PL emission. It should be noted that annealing led to a substantial reduction of this band intensity. Thus, too high Mg doping is found to cause a strong compensation of p-type conductivity by nonradiative defects of n-type as it is seen from C-V and PL measurements.
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Tuna</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>AIXTRON SE, Kaiserstr. 98</s1><s2>52134 Herzogenrath</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52134 Herzogenrath</wicri:noRegion><wicri:noRegion>Kaiserstr. 98</wicri:noRegion><wicri:noRegion>52134 Herzogenrath</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GuN Device Technology, RWTH Aachen University, Sommerfeldstr. 24</s1><s2>52074 Aachen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Hahn, H" uniqKey="Hahn H">H. Hahn</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GuN Device Technology, RWTH Aachen University, Sommerfeldstr. 24</s1><s2>52074 Aachen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Kalisch, H" uniqKey="Kalisch H">H. Kalisch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>AIXTRON SE, Kaiserstr. 98</s1><s2>52134 Herzogenrath</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52134 Herzogenrath</wicri:noRegion><wicri:noRegion>Kaiserstr. 98</wicri:noRegion><wicri:noRegion>52134 Herzogenrath</wicri:noRegion></affiliation></author><author><name sortKey="Giesen, C" uniqKey="Giesen C">C. Giesen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>AIXTRON SE, Kaiserstr. 98</s1><s2>52134 Herzogenrath</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52134 Herzogenrath</wicri:noRegion><wicri:noRegion>Kaiserstr. 98</wicri:noRegion><wicri:noRegion>52134 Herzogenrath</wicri:noRegion></affiliation></author><author><name sortKey="Vescan, A" uniqKey="Vescan A">A. Vescan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>AIXTRON SE, Kaiserstr. 98</s1><s2>52134 Herzogenrath</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52134 Herzogenrath</wicri:noRegion><wicri:noRegion>Kaiserstr. 98</wicri:noRegion><wicri:noRegion>52134 Herzogenrath</wicri:noRegion></affiliation></author><author><name sortKey="Rzheutski, M V" uniqKey="Rzheutski M">M. V. Rzheutski</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnosti Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Pavlovskii, V N" uniqKey="Pavlovskii V">V. N. Pavlovskii</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnosti Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Lutsenko, E V" uniqKey="Lutsenko E">E. V. Lutsenko</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnosti Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Yablonskii, G P" uniqKey="Yablonskii G">G. P. Yablonskii</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnosti Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Heuken, M" uniqKey="Heuken M">M. Heuken</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>AIXTRON SE, Kaiserstr. 98</s1><s2>52134 Herzogenrath</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52134 Herzogenrath</wicri:noRegion><wicri:noRegion>Kaiserstr. 98</wicri:noRegion><wicri:noRegion>52134 Herzogenrath</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GuN Device Technology, RWTH Aachen University, Sommerfeldstr. 24</s1><s2>52074 Aachen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0201179</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0201179 INIST</idno><idno type="RBID">Pascal:13-0201179</idno><idno type="wicri:Area/Main/Corpus">000C84</idno><idno type="wicri:Area/Main/Repository">000933</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>CV characteristic</term><term>Compensation</term><term>Doping</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Electronic properties</term><term>Gallium nitride</term><term>Growth mechanism</term><term>III-V semiconductors</term><term>Indium nitride</term><term>Light emitting diodes</term><term>MOCVD</term><term>MOVPE method</term><term>Magnesium additions</term><term>Optical properties</term><term>P type conductivity</term><term>Photoluminescence</term><term>Ternary compounds</term><term>Thick films</term><term>VPE</term><term>Voltage measurement</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term><term>Epitaxie phase vapeur</term><term>Mécanisme croissance</term><term>Propriété optique</term><term>Propriété électronique</term><term>Propriété électrique</term><term>Addition magnésium</term><term>Couche épaisse</term><term>Caractéristique capacité tension</term><term>Mesure tension électrique</term><term>Photoluminescence</term><term>Recuit</term><term>Conductivité type p</term><term>Dopage</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Conductivité électrique</term><term>Diode électroluminescente</term><term>Compensation</term><term>Méthode MOCVD</term><term>Semiconducteur III-V</term><term>Composé ternaire</term><term>InGaN</term><term>Substrat GaN</term><term>8115K</term><term>8110A</term><term>7820</term><term>7855</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A series of Mg-doped thick InGaN layers with different Cp<sub>2</sub>Mg flows were grown on n-type GaN layers. The Mg doping effect on optical and electrical properties of InGaN:Mg was investigated through capacitance-voltage (C-V) measurements and temperature-resolved photoluminescence (PL). After annealing, p-type conductivity with acceptor concentrations about 3.5 × 10<sup>18</sup> cm<sup>-3</sup> and 9.5 × 10<sup>17</sup> cm<sup>-3</sup> were observed for the samples doped with little Cp<sub>2</sub>Mg. With the highest Cp<sub>2</sub>Mg flow, an inversion from p-type to n-type was observed by analysis of a Mott-Schottky (M-S) plot. The inversion of conductivity type was accompanied by a disappearance of InGaN band-to-band PL emission. It should be noted that annealing led to a substantial reduction of this band intensity. Thus, too high Mg doping is found to cause a strong compensation of p-type conductivity by nonradiative defects of n-type as it is seen from C-V and PL measurements.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>370</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>16th International Conference on Metalorganic Vapor Phase Epitaxy</s1></fA09><fA11 i1="01" i2="1"><s1>TUNA (Ö.)</s1></fA11><fA11 i1="02" i2="1"><s1>HAHN (H.)</s1></fA11><fA11 i1="03" i2="1"><s1>KALISCH (H.)</s1></fA11><fA11 i1="04" i2="1"><s1>GIESEN (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>VESCAN (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>RZHEUTSKI (M. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>PAVLOVSKII (V. N.)</s1></fA11><fA11 i1="08" i2="1"><s1>LUTSENKO (E. V.)</s1></fA11><fA11 i1="09" i2="1"><s1>YABLONSKII (G. P.)</s1></fA11><fA11 i1="10" i2="1"><s1>HEUKEN (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>JONG KYU KIM</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KUECH (Thomas F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>CANEAU (Catherine)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>REDWING (Joan M.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>DADGAR (Armin)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>AIXTRON SE, Kaiserstr. 98</s1><s2>52134 Herzogenrath</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>GuN Device Technology, RWTH Aachen University, Sommerfeldstr. 24</s1><s2>52074 Aachen</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnosti Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>2-6</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000500688410010</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0201179</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A series of Mg-doped thick InGaN layers with different Cp<sub>2</sub>Mg flows were grown on n-type GaN layers. The Mg doping effect on optical and electrical properties of InGaN:Mg was investigated through capacitance-voltage (C-V) measurements and temperature-resolved photoluminescence (PL). After annealing, p-type conductivity with acceptor concentrations about 3.5 × 10<sup>18</sup> cm<sup>-3</sup> and 9.5 × 10<sup>17</sup> cm<sup>-3</sup> were observed for the samples doped with little Cp<sub>2</sub>Mg. With the highest Cp<sub>2</sub>Mg flow, an inversion from p-type to n-type was observed by analysis of a Mott-Schottky (M-S) plot. The inversion of conductivity type was accompanied by a disappearance of InGaN band-to-band PL emission. It should be noted that annealing led to a substantial reduction of this band intensity. Thus, too high Mg doping is found to cause a strong compensation of p-type conductivity by nonradiative defects of n-type as it is seen from C-V and PL measurements.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H20</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H55</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>MOVPE method</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>VPE</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Propriété optique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Optical properties</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Electronic properties</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electrical properties</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Addition magnésium</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Magnesium additions</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Couche épaisse</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Thick films</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Caractéristique capacité tension</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>CV characteristic</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Mesure tension électrique</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Voltage measurement</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Recuit</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Annealing</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Conductivité type p</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>P type conductivity</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Conductividad tipo p</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Dopage</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Doping</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Doping</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium nitride</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Diode électroluminescente</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Light emitting diodes</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Compensation</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Compensation</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>32</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>MOCVD</s0><s5>32</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>33</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>33</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>34</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>34</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Substrat GaN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>7820</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>7855</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>182</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XVI International Conference on Metalorganic Vapor Phase Epitaxy</s1><s2>16</s2><s3>Busan KOR</s3><s4>2012-05-20</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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